Part Number Hot Search : 
4406A 181ML PN2907A NX8501AG 20H32 00HST BD5001 8116L
Product Description
Full Text Search
 

To Download 2SK2864 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Ordering number : ENN6610
2SK2864
N-Channel Silicon MOSFET
2SK2864
Ultrahigh-Speed Switching Applications
Features
* * *
Package Dimensions
0.4 0.2
Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
[2SK2864]
8.2 7.8 6.2 3
8.4 10.0
0.6
4.2
1.2
1.0 2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
2.5
0.7
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings
Unit 200 20 20 80 50 150 V V A A W C C
--55 to +150
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 IG=100A, VDS=0 VDS=200V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V Ratings min 200 20 100 10 2.0 6 10 90 120 4.0 typ max Unit V V A A V S m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3092 No.6610-1/4
2SK2864
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Gate resistance Symbol Ciss1 Ciss2 Coss Crss td(on) tr td(off) tf VSD Rg Conditions VDS=0, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=20A, VGS=0 f=1MHz 1.0 Ratings min typ 3000 1700 400 150 28 85 130 90 1.0 2.0 max 3800 2150 420 185 35 110 165 105 1.5 3.0 Unit pF pF pF pF ns ns ns ns V
Switching Time Test Circuit
VIN VIN PW=10s D.C.1% VDD=100V ID=10A RL=10
10V 0V
D G
VOUT
P.G
50
S
2SK2864
20
ID -- VDS
8V
20 18
ID -- VGS
VDS=10V
6V
18
10V
5V
16
16
Drain Current, ID -- A
Drain Current, ID -- A
15V
14 12 10 8 6 4 2 0 0
14 12 10 8 6 4 2 0
75C
VGS=4V
1
2
3
4
5 IT01918 250
0
1
2
3
4
--25C
5
Tc=
25C
6
7
8 IT01919
Drain-to-Source Voltage, VDS -- V
200
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- m
180 160 140 120 100 80 60 40 0 2 4 6 8 10 12
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Tc=25C ID=10A
VGS=10V ID=10A
200
150
100
50
14
16
0 --60
--40
--20
Gate-to-Source Voltage, VGS -- V
IT01920
Case Temperature, Tc -- C
0
20
40
60
80
100
120
140
160
IT01921
No.6610-2/4
2SK2864
100
yfs -- ID
VDS=10V Forward Drain Current, IF -- A
Forward Transfer Admittance, yfs -- S
7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
IF -- VSD
VGS=0
= Tc
5C --2
C 75
25
C
0.01 10 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01923
Drain Current, ID -- A
10000 7 5 3 2
IT01922 10 9
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS -- V
VDS=100V ID=10A
Ciss
8 7 6 5 4 3 2 1 0
Ciss, Coss, Crss -- pF
1000 7 5 3 2 100 7 5 3 2 10 0 10 20 30 40 50 60 70 80 90 100
Coss
Crss
0
5
10
15
5C 25C --25 C
Tc=7
0.1 7 5 3 2
VGS -- Qg
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
1000 7
IT01924 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
Total Gate Charge, Qg -- nC
IT01925
SW Time -- ID
ASO
IDP=80A ID=20A
10
10 0 s
Switching Time, SW Time -- ns
5 3 2
VDD=100V VGS=10V Drain Current, ID -- A
<10s
td(off)
tf
tr
1m s
100 7 5 3 2
Operation in this area is limited by RDS(on).
m
10
s
DC s op e
0m
rat
td(on)
ion
10 0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
60
10 IT01926
7
0.1 1.0
Tc=25C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3
PD -- Tc
Drain-to-Source Voltage, VDS -- V
5 7 1000 IT01927
Allowable Power Dissipation, PD -- W
50
40
30
20
10
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT01928
No.6610-3/4
2SK2864
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice.
PS No.6610-4/4


▲Up To Search▲   

 
Price & Availability of 2SK2864

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X